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Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )
2015
작성자
유경종
작성일
2015-05-24 18:42
조회
234
저널명 :
Applied Physics A-Materials science & processing, 120(3) 841-846 (2015, SEP)
논문 저자
Tae Hoon Park and Tae Geun Kim*
좋아요
0
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0
인쇄
Design-of-electron-blocking-layers-for-improving-internal-....pdf
«
Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)
Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes (IF 1.134 ; JCR 77.119%)
»
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