Papers

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )

2015

작성자

유경종

작성일

2015-05-24 18:42

조회

234

저널명 : Applied Physics A-Materials science & processing, 120(3) 841-846 (2015, SEP)

논문 저자

Tae Hoon Park and Tae Geun Kim*

« Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)

Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes (IF 1.134 ; JCR 77.119%) »

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