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Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices (IF 3.597 ; JCR 23.548% )
2015
작성자
유경종
작성일
2015-05-24 18:44
조회
286
저널명 :
Applied Physics Letters, 106(22) 223506 (2015, JUN)
논문 저자
Jeong Yong Kwon, Ju Hyun Park, Tae Geun Kim*
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0
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인쇄
Self-rectifying-resistive-switching-characteristics-with-ultralow-operating-....pdf
«
Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes (IF 1.134 ; JCR 77.119%)
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )
»
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