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Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )
2015
작성자
유경종
작성일
2015-05-24 18:45
조회
221
저널명 :
Applied Physics Letters, 106(20) 203101 (2015, MAY)
논문 저자
Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, and Tae Geun Kim*
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Bipolar-resistive-switching-characteristics-in-tantalum-nitride....pdf
«
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )
Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )
»
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