Papers

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )

2015

작성자

유경종

작성일

2015-05-24 18:45

조회

195

저널명 : Applied Physics Letters, 106(20) 203101 (2015, MAY)

논문 저자

Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, and Tae Geun Kim*

« Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )

Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% ) »

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