검색:
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
닫기
Menu
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
close
Papers
Home
»
Papers
Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device (IF 3.597 ; JCR 23.548% )
2016
작성자
유경종
작성일
2016-05-24 18:51
조회
261
저널명 :
Applied Physics Letters, 109(20) 203505 (2016, NOV)
논문 저자
H. Choi, H. Lee, J. Park, H-Y. Yu, T. G. Kim, and C. Shin*
좋아요
0
싫어요
0
인쇄
Experimental-evidence-of-negative-quantum-capacitance-in-topological....pdf
«
Glass-based transparent conductive electrode: its application to visible-to-ultraviolet light-emitting diodes (IF 8.758 ; JCR 10.35% )
A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si (111) Substrates (IF 1.134 ; JCR 77.119%)
»
목록보기
Powered by KBoard
search
close
sign-in
bars
angle-double-up
ellipsis-v
chevron-down