Papers

Ti-doped GaOx Resistive Switching Memory with Self-rectifying Behavior by using NbOx/Pt Bilayers (IF 8.758 ; JCR 10.35% )

2017

작성자

유경종

작성일

2017-05-24 19:00

조회

246

저널명 : ACS Applied Materials & Interfaces 9(49), 43336-43342 (2017, DEC)

논문 저자

Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun*

« Highly efficient deep-UV light-emitting diodes using AlN-based, deep-UV transparent glass electrodes (IF 8.758 ; JCR 10.35% )

Microfluidic channel-coupled 3D quartz nanohole arrays for high capture and release efficiency of BT20 cancer cells (IF 6.895 ; JCR 15.516% ) »

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