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Introduction
About ASL
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Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
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Ti-doped GaOx Resistive Switching Memory with Self-rectifying Behavior by using NbOx/Pt Bilayers (IF 8.758 ; JCR 10.35% )
2017
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2017-05-24 19:00
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246
저널명 :
ACS Applied Materials & Interfaces 9(49), 43336-43342 (2017, DEC)
논문 저자
Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun*
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Ti-doped-GaOx-Resistive-Switching-Memory-with-Self-rectifying-....pdf
«
Highly efficient deep-UV light-emitting diodes using AlN-based, deep-UV transparent glass electrodes (IF 8.758 ; JCR 10.35% )
Microfluidic channel-coupled 3D quartz nanohole arrays for high capture and release efficiency of BT20 cancer cells (IF 6.895 ; JCR 15.516% )
»
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