Papers

Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)

2019

작성자

김나현

작성일

2019-05-24 15:44

조회

348

저널명 : Journal of Alloys and Compounds 773, 490-495 (2019, JAN)

논문 저자

Sang Hoon Oh, Tae Ho Lee, Kyung-Rock Son, and Tae Geun Kim*

« Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)

Variation of Poly-Si Grain Structures under Thermal Annealing and its Effect on the Performance of TiN/Al2O3/Si3N4/SiO2/Poly-Si Capacitors / Applied Surface Science (IF 3.387 ; JCR 2.632%) »

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