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Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)
2019
작성자
김나현
작성일
2019-05-24 15:44
조회
348
저널명 :
Journal of Alloys and Compounds 773, 490-495 (2019, JAN)
논문 저자
Sang Hoon Oh, Tae Ho Lee, Kyung-Rock Son, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Fabrication-of-HfO2TiO2-based-conductive-distributed-Bragg-reflectors-Its-application....pdf
«
Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)
Variation of Poly-Si Grain Structures under Thermal Annealing and its Effect on the Performance of TiN/Al2O3/Si3N4/SiO2/Poly-Si Capacitors / Applied Surface Science (IF 3.387 ; JCR 2.632%)
»
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