Papers

Variation of Poly-Si Grain Structures under Thermal Annealing and its Effect on the Performance of TiN/Al2O3/Si3N4/SiO2/Poly-Si Capacitors / Applied Surface Science (IF 3.387 ; JCR 2.632%)

2019

작성자

김나현

작성일

2019-05-24 15:44

조회

248

저널명 : Applied Surface Science, 477 104-110 (2019, MAY)

논문 저자

Suk Bum Hong, Ju Hyun Park, Tae Ho Lee, Jun Hee Lim, Changhwan Shin, Young Woo Park, Tae Geun Kim*

« Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)

ITO/AlN rod-based hybrid electrodes: effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes / Applied Surface Science (IF 6.182 ; JCR 2.381%) »

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