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Variation of Poly-Si Grain Structures under Thermal Annealing and its Effect on the Performance of TiN/Al2O3/Si3N4/SiO2/Poly-Si Capacitors / Applied Surface Science (IF 3.387 ; JCR 2.632%)
2019
작성자
김나현
작성일
2019-05-24 15:44
조회
339
저널명 :
Applied Surface Science, 477 104-110 (2019, MAY)
논문 저자
Suk Bum Hong, Ju Hyun Park, Tae Ho Lee, Jun Hee Lim, Changhwan Shin, Young Woo Park, Tae Geun Kim*
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0
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0
인쇄
Variation-of-Poly-Si-Grain-Structures-under-Thermal-Annealing-and-its-Effect-on....pdf
«
Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes / Journal of Alloys & Compounds (IF 3.779 ; JCR 4.667%)
ITO/AlN rod-based hybrid electrodes: effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes / Applied Surface Science (IF 6.182 ; JCR 2.381%)
»
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