닫기
Menu
close

Papers

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells (IF 2.361 ; JCR 47.932% )

2010
작성자
유경종
작성일
2010-05-24 13:18
조회
172
저널명 : Semiconductor Science And Technology, 25(6) 65002 (2010, APR)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Kyoung Chan Kim, Yujeong Seo,

Ki-Hyun Nam, Hong-Bay Chung, Eui Bok Lee and Tae Geun Kim* 
« Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% )
Negative/positive-bias instability analysis of the memory characteristics improved by hydrogen post-annealing in MANOS capacitors (IF 1.407 ; JCR 71.617% ) »
목록보기
Powered by KBoard
chevron-down