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Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells (IF 2.361 ; JCR 47.932% )
2010
작성자
유경종
작성일
2010-05-24 13:18
조회
172
저널명 :
Semiconductor Science And Technology, 25(6) 65002 (2010, APR)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Kyoung Chan Kim, Yujeong Seo,
Ki-Hyun Nam, Hong-Bay Chung, Eui Bok Lee and Tae Geun Kim*
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인쇄
Large_resistive_switching_phenomena.pdf
«
Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% )
Negative/positive-bias instability analysis of the memory characteristics improved by hydrogen post-annealing in MANOS capacitors (IF 1.407 ; JCR 71.617% )
»
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