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Hydrogen passivation effects under negative bias temperature instability stress in metal silicon-oxide silicon-nitride silicon-oxide silicon capacitors for flash memories (IF 1.535 ; JCR 67.419% )

2010
작성자
유경종
작성일
2010-05-24 13:47
조회
182
저널명 : Microelectronics Reliability, 50(1) 21-25 (2010, JAN)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Yongjie Zhang, Jong Sun Park, Tae Geun Kim*
« High efficiency GaN light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices (IF 2.384 ; JCR 39.691% )
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