검색:
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
닫기
Menu
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
close
Papers
Home
»
Papers
Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode (IF 0.632 ; JCR 90% )
2011
작성자
유경종
작성일
2011-05-24 14:48
조회
232
저널명 :
Journal of the Optical Society of Korea, 15(2) 124-127 (2011, MAY)
논문 저자
Trevor Chan, Sung Hun Son, Kyoung Chan Kim, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Design-and-Simulation-of-an-808-nm-InAlAsAlGaAs-GRIN-SCH-Quantum-Dot-Laser.pdf
«
Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD (IF 1.632 ; JCR 59.615% )
Improved device performance in nonpolar a-plane GaN LEDs using an Ni/Al/Ni/Au n-type ohmic contact (IF 2.291 ; JCR 44.839% )
»
목록보기
Powered by KBoard
search
close
sign-in
bars
angle-double-up
ellipsis-v
chevron-down