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Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode (IF 0.632 ; JCR 90% )

2011
작성자
유경종
작성일
2011-05-24 14:48
조회
186
저널명 : Journal of the Optical Society of Korea, 15(2) 124-127 (2011, MAY)
논문 저자
Trevor Chan, Sung Hun Son, Kyoung Chan Kim, and Tae Geun Kim*
« Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD (IF 1.632 ; JCR 59.615% )
Improved device performance in nonpolar a-plane GaN LEDs using an Ni/Al/Ni/Au n-type ohmic contact (IF 2.291 ; JCR 44.839% ) »
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