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Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory (IF 1.134 ; JCR 77.119%)
2014
작성자
유경종
작성일
2014-05-24 18:32
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219
저널명 :
Journal of Nanoscience & Nanotechnology, 14(12) 9088-9091 (2014, DEC)
논문 저자
Hee-Dong Kim, Min Ju Yun, Seok Man Hong, and Tae Geun Kim*
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Size-dependent-resistive-switching-properties-of-the-active-region-in-nickel....pdf
«
High conductivity and ultraviolet band transparency of single-walled carbon nanotube films bridged with gold nanoparticles (IF 1.134 ; JCR 77.119%)
Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%)
»
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