Papers

Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory (IF 1.134 ; JCR 77.119%)

2014

작성자

유경종

작성일

2014-05-24 18:32

조회

170

저널명 : Journal of Nanoscience & Nanotechnology, 14(12) 9088-9091 (2014, DEC)

논문 저자

Hee-Dong Kim, Min Ju Yun, Seok Man Hong, and Tae Geun Kim*

« High conductivity and ultraviolet band transparency of single-walled carbon nanotube films bridged with gold nanoparticles (IF 1.134 ; JCR 77.119%)

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%) »

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