Papers

Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes (IF 3.669 ; JCR 19.072% )

2015

작성자

유경종

작성일

2015-05-24 18:38

조회

223

저널명 : Optics Express, 23(22) 28775-28783 (2015, NOV)

논문 저자

Hee-Dong Kim, Kyeong Heon Kim, Su Jin Kim, and Tae Geun Kim*

« InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes (IF 2.03 ; JCR 51.935% )

In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% ) »

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