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Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes (IF 3.669 ; JCR 19.072% )
2015
작성자
유경종
작성일
2015-05-24 18:38
조회
223
저널명 : Optics Express, 23(22) 28775-28783 (2015, NOV)
논문 저자
Hee-Dong Kim, Kyeong Heon Kim, Su Jin Kim, and Tae Geun Kim*
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인쇄
Fabrication-of-conducting-filament-embedded-indium-tin-oxide....pdf
«
InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes (IF 2.03 ; JCR 51.935% )
In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% )
»
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