Papers

Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)

2015

작성자

유경종

작성일

2015-05-24 18:40

조회

238

저널명 : Journal of Physics D: Applied Physics, 48(44) 445102 (2015, NOV)

논문 저자

Kim, Hee-Dong; Kim, Kyeong Heon; An, Ho-Myoung; Kim, Tae Geun*

« In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% )

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%) »

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