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Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)
2015
작성자
유경종
작성일
2015-05-24 18:40
조회
238
저널명 :
Journal of Physics D: Applied Physics, 48(44) 445102 (2015, NOV)
논문 저자
Kim, Hee-Dong; Kim, Kyeong Heon; An, Ho-Myoung; Kim, Tae Geun*
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Charge-trap-flash-memory-using-zirconium-nitride-based....pdf
«
In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% )
Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)
»
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