Papers

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)

2015

작성자

유경종

작성일

2015-05-24 18:40

조회

227

저널명 : IEEE Electron Device Letters, 36(10) 1024-1026 (2015, OCT)

논문 저자

Tae-ho lee, Ju Hyun Park, Tae Geun Kim*

« Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% ) »

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