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Introduction
About ASL
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Organic LEDs & Photovoltaics
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Memory & TFT
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Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)
2015
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유경종
작성일
2015-05-24 18:40
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227
저널명 : IEEE Electron Device Letters, 36(10) 1024-1026 (2015, OCT)
논문 저자
Tae-ho lee, Ju Hyun Park, Tae Geun Kim*
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Diodelike-Bipolar-Resistive-Switching-High-Performance-and....pdf
«
Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)
Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )
»
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