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Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )
2015
작성자
유경종
작성일
2015-05-24 18:47
조회
205
저널명 :
Physica Status Solidi - Rapid Research Letters, 9(4) 264-268 (2015, APR)
논문 저자
Hee-Dong Kim, Min Ju Yun and Tae Geun Kim*
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Forming‐free-resistive-switching-characteristics-and-improved-....pdf
«
Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )
Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory (IF 1.351 ; JCR 68.71% )
»
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