Papers

Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )

2015

작성자

유경종

작성일

2015-05-24 18:47

조회

205

저널명 : Physica Status Solidi - Rapid Research Letters, 9(4) 264-268 (2015, APR)

논문 저자

Hee-Dong Kim, Min Ju Yun and Tae Geun Kim*

« Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )

Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory (IF 1.351 ; JCR 68.71% ) »

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