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Introduction
About ASL
Office & Infra
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Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
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ReRAM
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2D/Oxide TFTs
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Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application / ACS Applied Materials & Interfaces (IF: 8.758; JCR 10.350%)
2018
작성자
손경락
작성일
2018-05-24 18:23
조회
290
저널명 : ACS Applied Materials & Interfaces 10(40), 33768-33772 (2018, OCT)
논문 저자
Tae Ho Lee
, Dae Yun Kang, and Tae Geun Kim*
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AgSiOxNy-Based-Bilayer-ReRAM-Structure-with-Self-Limiting-Bidirectional....pdf
«
Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects / Materials and Design (IF: 6.289; JCR 18.631%)
Graphene-based enzyme-modified field-effect transistor biosensor for monitoring drug effects in Alzheimer's disease treatment / Sensors & Actuators B: Chemical (IF: 7.100; JCR 2.344%)
»
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