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Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application / ACS Applied Materials & Interfaces (IF: 8.758; JCR 10.350%)

2018
작성자
손경락
작성일
2018-05-24 18:23
조회
220
  • 저널명 : ACS Applied Materials & Interfaces 10(40), 33768-33772 (2018, OCT)
    논문 저자
    Tae Ho Lee, Dae Yun Kang, and Tae Geun Kim*
« Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects / Materials and Design (IF: 6.289; JCR 18.631%)
Graphene-based enzyme-modified field-effect transistor biosensor for monitoring drug effects in Alzheimer's disease treatment / Sensors & Actuators B: Chemical (IF: 7.100; JCR 2.344%) »
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