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Retention Enhancement through Capacitance-Dependent Voltage Division Analysis in 3D Stackable TaOx/HfO2-Based Selectorless Memristor / Materials & Design (IF 6.289 ; JCR 18.631%)
2021
작성자
thlee12
작성일
2021-05-24 11:33
조회
636
저널명 :
Materials & Design
207
, 109845 (2021, SEP)
논문 저자
Ji Hoon Sung
, Ju Hyun Park, Dong Su Jeon, Donghyun Kim, Min Ji Yu, Atul C. Khot, Tukaram D. Dongale, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Retention-Enhancement-through-Capacitance-Dependent-Voltage-Division-Analysis....pdf
«
(Front Cover) Haze-suppressed transparent electrodes using IZO/Ag/IZO nanomesh for highly flexible and efficient blue organic light-emitting diodes / Advanced Optical Materials (IF 8.286 ; JCR 5.67%)
(Review paper) Recent Progress in Selector and Self-rectifying Devices for Resistive Random-Access Memory Application / Physica Status Solidi - Rapid Research Letters (IF: 2.291 ; JCR 44.839%)
»
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