Papers

Retention Enhancement through Capacitance-Dependent Voltage Division Analysis in 3D Stackable TaOx/HfO2-Based Selectorless Memristor / Materials & Design (IF 6.289 ; JCR 18.631%)

2021

작성자

thlee12

작성일

2021-05-24 11:33

조회

636

저널명 : Materials & Design 207, 109845 (2021, SEP)

논문 저자

Ji Hoon Sung, Ju Hyun Park, Dong Su Jeon, Donghyun Kim, Min Ji Yu, Atul C. Khot, Tukaram D. Dongale, and Tae Geun Kim*

« (Front Cover) Haze-suppressed transparent electrodes using IZO/Ag/IZO nanomesh for highly flexible and efficient blue organic light-emitting diodes / Advanced Optical Materials (IF 8.286 ; JCR 5.67%)

(Review paper) Recent Progress in Selector and Self-rectifying Devices for Resistive Random-Access Memory Application / Physica Status Solidi - Rapid Research Letters (IF: 2.291 ; JCR 44.839%) »

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