Papers

전체 260
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12
Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory (IF 1.351 ; JCR 68.71% )
유경종 | 2015.05.24 | 추천 0 | 조회 208
유경종 2015.05.24 0 208
11
Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )
유경종 | 2015.05.24 | 추천 0 | 조회 199
유경종 2015.05.24 0 199
10
Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )
유경종 | 2015.05.24 | 추천 0 | 조회 213
유경종 2015.05.24 0 213
9
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )
유경종 | 2015.05.24 | 추천 0 | 조회 234
유경종 2015.05.24 0 234
8
Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices (IF 3.597 ; JCR 23.548% )
유경종 | 2015.05.24 | 추천 0 | 조회 278
유경종 2015.05.24 0 278
7
Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes (IF 1.134 ; JCR 77.119%)
유경종 | 2015.05.24 | 추천 0 | 조회 214
유경종 2015.05.24 0 214
6
Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )
유경종 | 2015.05.24 | 추천 0 | 조회 226
유경종 2015.05.24 0 226
5
Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)
유경종 | 2015.05.24 | 추천 0 | 조회 219
유경종 2015.05.24 0 219
4
Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)
유경종 | 2015.05.24 | 추천 0 | 조회 230
유경종 2015.05.24 0 230
3
In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% )
유경종 | 2015.05.24 | 추천 0 | 조회 203
유경종 2015.05.24 0 203
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