Papers

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method (IF 2.361; JCR 47.932%)

2004~2009
작성자
김태형
작성일
2008-06-18 16:15
조회
178

저널명 : Semiconductor Science and Technology pp.5 23125039 (2008, NOV)

논문 저자
Shi Jong Leem, Young Chul Shin, Eun Hong Kim, Chul Min Kim, Byoung Gyu Lee, Youngboo Moon, In Hwan Lee , and Tae Geun Kim
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