Papers

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories (IF 2.361; JCR 47.932%)

2004~2009
작성자
김태형
작성일
2008-06-18 16:18
조회
175

저널명 : Semiconductor Science and Technology, Vol.23, (2008, JUL)

논문 저자
Hee Dong Kim, Ho-Myoung An, Kyoung Chan Kim, Yu Jeong Seo, and Tae Geun Kim
chevron-down