Papers

Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory (IF 0.535; JCR 93.529%)

2004~2009
작성자
김태형
작성일
2008-06-18 16:29
조회
185

저널명 : Journal of the Korean Physical Society, Vol. 53, No. 6, 3302 (2008, DEC)

논문 저자
Yu Jeong Seo, Kyoung Chan Kim, Hee Dong Kim, Ho-Myoung An, and Tae Geun Kim
chevron-down