Papers

Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures (IF 0.535; JCR 93.529%)

2004~2009
작성자
김태형
작성일
2008-06-18 16:37
조회
174

저널명 : Journal of the Korean Physical Society, Vol. 53, No. 915, 2719 (2008, NOV)

논문 저자
S. H. Shin, J. Y. Lim, J. D. Song, H. J. Kim and S. H. Han, and Tae Geun Kim
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