Papers

전체 261
번호 제목 작성자 작성일 추천 조회
9
Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method (IF 3.998 ; JCR 23.239% )
유경종 | 2014.05.24 | 추천 0 | 조회 224
유경종 2014.05.24 0 224
8
Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers (IF 2.125 ; JCR 50% )
유경종 | 2014.05.24 | 추천 0 | 조회 199
유경종 2014.05.24 0 199
7
Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED (IF 3.998 ; JCR 23.239% )
유경종 | 2014.05.24 | 추천 0 | 조회 193
유경종 2014.05.24 0 193
6
Improved performance of Ga2O3/ITO‐based transparent conductive oxide films using hydrogen annealing for near‐ultraviolet light‐emitting diodes(IF 1.525; JCR 44.422%)
유경종 | 2014.05.24 | 추천 0 | 조회 169
유경종 2014.05.24 0 169
5
Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1× 1 crossbar array resistive random access memory cells (IF 2.305 ; JCR 42.784% )
유경종 | 2014.05.24 | 추천 0 | 조회 166
유경종 2014.05.24 0 166
4
Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition (IF 2.120 ; JCR 54.348% )
유경종 | 2014.05.24 | 추천 0 | 조회 161
유경종 2014.05.24 0 161
3
Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping (IF 8.758 ; JCR 10.35% )
유경종 | 2014.05.24 | 추천 0 | 조회 175
유경종 2014.05.24 0 175
2
Self-Selection Bipolar Resistive Switching Phenomena Observed in NbON/NbN Bilayer for Cross-Bar Array Memory Applications (IF 3.597 ; JCR 23.548% )
유경종 | 2014.05.24 | 추천 0 | 조회 167
유경종 2014.05.24 0 167
1
A Universal Method of Producing Transparent Electrodes Using Wide‐Bandgap Materials (IF 16.836; JCR 3.981%)
유경종 | 2014.05.24 | 추천 0 | 조회 197
유경종 2014.05.24 0 197
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