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InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes (IF 2.03 ; JCR 51.935% )
2015
작성자
유경종
작성일
2015-05-24 18:37
조회
184
저널명 :
Thin Solid Films, 591 39-42 (2015, SEP)
논문 저자
Suk won Kim and Tae Geun Kim*
좋아요
0
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0
인쇄
InGaN-AlGaInN-based-ultraviolet-light-emitting-diodes-with-indium-....pdf
Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes (IF 3.669 ; JCR 19.072% )
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