Papers

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes (IF 2.03 ; JCR 51.935% )

2015

작성자

유경종

작성일

2015-05-24 18:37

조회

184

저널명 : Thin Solid Films, 591 39-42 (2015, SEP)

논문 저자

Suk won Kim and Tae Geun Kim*

Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes (IF 3.669 ; JCR 19.072% ) »

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