Papers

Low Resistance High Reflectance ITO/Al Ohmic Contacts to p-Type GaN Via SF6 Plasma Treatments (IF 2.321 ; JCR 24.808%)

2010
작성자
유경종
작성일
2010-05-24 12:38
조회
209
저널명 : Electrochemical and Solid-State Letters, 13(4) (2010, APR)
논문 저자
Wan Ho Lee, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Yun Mo Sung, and Tae Geun Kim*
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