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Low Resistance High Reflectance ITO/Al Ohmic Contacts to p-Type GaN Via SF6 Plasma Treatments (IF 2.321 ; JCR 24.808%)

2010
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유경종
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2010-05-24 12:38
조회
209
저널명 : Electrochemical and Solid-State Letters, 13(4) (2010, APR)
논문 저자
Wan Ho Lee, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Yun Mo Sung, and Tae Geun Kim*
« Gain Dependent Linewidth Enhancement Factor in the Quantum Dot Structures (IF 3.551 ; JCR 25.484%)
Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% ) »
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