Papers

Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% )

2010
작성자
유경종
작성일
2010-05-24 12:43
조회
216
저널명 : Journal of the Korean Physical Society, 56(4) 1287-1290 (2010, APR)
논문 저자
Young Su Lee, Hong Goo Choi, Cheol Koo Hahn, Su Jin Kim Tae Geun Kim* 
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