Papers

Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% )

2010

작성자

유경종

작성일

2010-05-24 12:43

조회

174

저널명 : Journal of the Korean Physical Society, 56(4) 1287-1290 (2010, APR)

논문 저자

Young Su Lee, Hong Goo Choi, Cheol Koo Hahn, Su Jin Kim Tae Geun Kim*

« Low Resistance High Reflectance ITO/Al Ohmic Contacts to p-Type GaN Via SF6 Plasma Treatments (IF 2.321 ; JCR 24.808%)

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells (IF 2.361 ; JCR 47.932% ) »

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