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Improved DC Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Au Electrode Schemes (IF 0.535 ; JCR 93.529% )
2010
작성자
유경종
작성일
2010-05-24 12:43
조회
216
저널명 :
Journal of the Korean Physical Society, 56(4) 1287-1290 (2010, APR)
논문 저자
Young Su Lee, Hong Goo Choi, Cheol Koo Hahn, Su Jin Kim Tae Geun Kim*
좋아요
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0
인쇄
Improved_DC_Characteristics_of_AlGaN.pdf
«
Low Resistance High Reflectance ITO/Al Ohmic Contacts to p-Type GaN Via SF6 Plasma Treatments (IF 2.321 ; JCR 24.808%)
Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells (IF 2.361 ; JCR 47.932% )
»
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