Papers

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells (IF 2.361 ; JCR 47.932% )

2010
작성자
유경종
작성일
2010-05-24 13:18
조회
203
저널명 : Semiconductor Science And Technology, 25(6) 65002 (2010, APR)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Kyoung Chan Kim, Yujeong Seo,

Ki-Hyun Nam, Hong-Bay Chung, Eui Bok Lee and Tae Geun Kim* 
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