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Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD (IF 1.632 ; JCR 59.615% )

2011
작성자
유경종
작성일
2011-05-24 14:45
조회
290
저널명 : Journal of Crystal Growth, 326(1) 98-102 (2011, JUL)
논문 저자
Ji-Su Son, Kwang Hyeon Baik, Yong Gon Seo, Hooyoung Song, Ji Hoon Kim, Sung-Min Hwang, Tae-Geun Kim*
« A new architecture for transparent electrodes: Relieving the trade-off between electrical conductivity and optical transmittance (IF 27.398 ; JCR 2.07% )
Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode (IF 0.632 ; JCR 90% ) »
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