Papers

Improved Reliability of Au/Si3N4/Ti Resistive Switching Memory Cells due to a Hydrogen Post-annealing Treatment (IF 2.286 ; JCR 45.484% )

2011
작성자
유경종
작성일
2011-05-24 14:15
조회
185
저널명 : JOURNAL OF APPLIED PHYSICS, 109(1) 16105 (2011, JAN)
논문 저자
Hee-Dong Kim, Ho-Myoung An, and Tae Geun Kim*
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