Papers

Low-resistance nonalloyed Ti/Al ohmic contacts to N-face n-type GaN with O2 plasma treatment (IF 4.221 ; JCR 17.857% )

2011
작성자
유경종
작성일
2011-05-24 14:17
조회
167
저널명 : IEEE Electron Device Letters, 32(2) 149-151 (2011, JAN)
논문 저자
Su Jin Kim, Tae Yang Nam, and Tae Geun Kim*
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