Papers

Improved Crystal Quality and Surface Morphology of Nanpolar a-plane GaN grown on r-plane Sapphire Substrates (IF 0.535 ; JCR 93.529% )

2011
작성자
유경종
작성일
2011-05-24 14:23
조회
167
저널명 : Journal of the Korean Physical Society, 58(4) 873-877 (2011, APR)
논문 저자
Dong Ho Kim, Su Jin Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim and Tae Geun Kim∗

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