Papers

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction (IF 3.169 ; JCR 28.065% )

2011
작성자
유경종
작성일
2011-05-24 14:29
조회
172
저널명 : Journal of Physics D: Applied Physics, 44(15) 155105 (2011, APR)
논문 저자
Yujeong Seo, Ho-Myoung An, Hee-Dong Kim, In Rok Hwang,

Sa Hwan Hong, Bae Ho Park and Tae Geun Kim*
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