Papers

Charge trap flash memory using ferroelectric materials as a blocking layer (IF 3.597 ; JCR 23.548%)

2012
작성자
유경종
작성일
2012-05-24 16:55
조회
154
저널명 : Applied Physics Letters, 100(17) 173507 (2012, APR)
논문 저자
Yujeong Seo , Ho-Myoung An , Min Yeong Song and Tae Geun Kim*
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