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Realization of one-diode–type resistive-switching memory with Cr–SrTiO3 film (IF 3.086 ; JCR 28.71%)

2012
작성자
유경종
작성일
2012-05-24 16:58
조회
145
저널명 : Applied Physics Express, 5(9) 091202 (2012, SEP)
논문 저자
Min Yeong Song, Yu Jeong Seo, Yeon Soo Kim, Ho-Myoung An, Yun Mo Sung, Bae Ho Park, and Tae Geun Kim*
« AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes (IF 3.597 ; JCR 23.548%)
Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells (IF 2.913 ; JCR 34.516%) »
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