Papers

Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells (IF 2.913 ; JCR 34.516%)

2012
작성자
유경종
작성일
2012-05-24 16:59
조회
185
저널명 : IEEE Transactions on Electron Devices, 59(9) 2302-2307 (2012, SEP)
논문 저자
Hee-dong Kim, Ho-Myoung An, and Tae Geun Kim*
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