Papers

Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices (IF 2.286 ; JCR 45.484%)

2012
작성자
유경종
작성일
2012-05-24 17:00
조회
154
저널명 : Journal of Applied Physics, 112(7) 074505 (2012, OCT)
논문 저자
Yu Jeong Seo, Min Yeong Song, Ho-Myoung An, Yeon Soo Kim, Bae Ho Park, and Tae Geun Kim*
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