Papers

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer (IF 4.019 ; JCR 29.777%)

2012
작성자
유경종
작성일
2012-05-24 17:01
조회
157
저널명 : Materials Research Bulletin, 47(10) 2927-2930 (2012, OCT)
논문 저자
Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Hyun Cheol Koo, and Tae Geun Kim*
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