Papers

Deep level defects in Ga-and N-polarity GaN grown by molecular beam epitaxy on si (111) (IF 1.632 ; JCR 59.615% )

2013
작성자
유경종
작성일
2013-05-24 17:28
조회
173
저널명 : Journal of Crystal Growth, 378 299-302 (2013, SEP)
논문 저자
Koteswara Rao Peta, Sang Tae Lee, Moon Deock Kim, Jae Eung Oh, Song Gang Kim, and Tae Geun Kim*
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