Papers

Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films (IF 4.221 ; JCR 17.857% )

2013

작성자

유경종

작성일

2013-05-24 17:29

조회

214

저널명 : IEEE Electron Device Letters, 34(9) 1181-1183 (2013, SEP)

논문 저자

Seok Man Hong, Hee Dong Kim, Ho Myoung An, and Tae Geun Kim*

« Deep level defects in Ga-and N-polarity GaN grown by molecular beam epitaxy on si (111) (IF 1.632 ; JCR 59.615% )

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% ) »

목록보기

Powered by KBoard