검색:
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
닫기
Menu
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
close
Papers
Home
»
Papers
Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films (IF 4.221 ; JCR 17.857% )
2013
작성자
유경종
작성일
2013-05-24 17:29
조회
214
저널명 :
IEEE Electron Device Letters, 34(9) 1181-1183 (2013, SEP)
논문 저자
Seok Man Hong, Hee Dong Kim, Ho Myoung An, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Effect-of-work-function-difference-between-top-and-bottom-electrodes-on....pdf
«
Deep level defects in Ga-and N-polarity GaN grown by molecular beam epitaxy on si (111) (IF 1.632 ; JCR 59.615% )
Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% )
»
목록보기
Powered by KBoard
search
close
sign-in
bars
angle-double-up
ellipsis-v
chevron-down