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Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films (IF 4.221 ; JCR 17.857% )

2013
작성자
유경종
작성일
2013-05-24 17:29
조회
171
저널명 : IEEE Electron Device Letters, 34(9) 1181-1183 (2013, SEP)
논문 저자
Seok Man Hong, Hee Dong Kim, Ho Myoung An, and Tae Geun Kim*
« Deep level defects in Ga-and N-polarity GaN grown by molecular beam epitaxy on si (111) (IF 1.632 ; JCR 59.615% )
Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% ) »
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