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Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% )
2013
작성자
유경종
작성일
2013-05-24 17:30
조회
207
저널명 :
Journal of Vacuum Science and Technology B, 31(4) 041205 (2013, JUL)
논문 저자
Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, and Tae Geun Kim*
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Improved-reliability-of-TiZrNPt-resistive-switching-memory-cells-using-hydrogen....pdf
«
Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films (IF 4.221 ; JCR 17.857% )
Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates (IF 2.291 ; JCR 44.839% )
»
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