Papers

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% )

2013

작성자

유경종

작성일

2013-05-24 17:30

조회

207

저널명 : Journal of Vacuum Science and Technology B, 31(4) 041205 (2013, JUL)

논문 저자

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, and Tae Geun Kim*

« Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films (IF 4.221 ; JCR 17.857% )

Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates (IF 2.291 ; JCR 44.839% ) »

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