Papers

Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing (IF 1.351 ; JCR 68.71% )

2013
작성자
유경종
작성일
2013-05-24 17:30
조회
207
저널명 : Journal of Vacuum Science and Technology B, 31(4) 041205 (2013, JUL)
논문 저자
Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, and Tae Geun Kim*
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