Papers

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition (IF 2.120 ; JCR 54.348% )

2014
작성자
유경종
작성일
2014-05-24 17:56
조회
187
저널명 : Superlattices and Microstructures, 75 390-397 (2014, NOV)
논문 저자
Ho Young Chung, Su Jin Kim, and Tae Geun Kim*
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