Papers

Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1× 1 crossbar array resistive random access memory cells (IF 2.305 ; JCR 42.784% )

2014
작성자
유경종
작성일
2014-05-24 17:57
조회
154
저널명 : Microelectronic Engineering, 126 169-172 (2014, AUG)
논문 저자
Hee-Dong Kim, Min Ju Yun, Seok Man Hong, Ju Hyun Park, Dong Su Jeon, and Tae Geun Kim*
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