Papers

Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method (IF 3.998 ; JCR 23.239% )

2014

작성자

유경종

작성일

2014-05-24 18:25

조회

197

저널명 : Scientific Reports, 4 4614 (2014, APR)

논문 저자

Hee-Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoeng Heon Kim, and Tae Geun Kim*

« Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers (IF 2.125 ; JCR 50% )

Highly transparent conductive Ag/Ga2O3 electrode for nearultraviolet lightemitting diodes (IF 1.759 ; JCR 63.043% ) »

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