Papers

Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method (IF 3.998 ; JCR 23.239% )

2014
작성자
유경종
작성일
2014-05-24 18:25
조회
249

저널명 : Scientific Reports, 4 4614 (2014, APR)
논문 저자
Hee-Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoeng Heon Kim, and Tae Geun Kim*
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