Papers

Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device / Journal of Alloys & Compounds (IF 4.650 ; JCR 9.494%)

2021
작성자
shhong
작성일
2021-05-11 20:00
조회
293
저널명 : Journal of Alloys and Compounds, 854 157261 (2021, FEB)
논문 저자
Donghyun Kim; Ju Hyun Park; Dong Su Jeon; Tukaram D.Dongale; Tae Geun Kim* 
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