Papers

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2 (IF 3.597 ; JCR 23.548% )

2004~2009
작성자
유경종
작성일
2008-06-15 17:56
조회
159
저널명 : APPLIED PHYSICS LETTERS, 93 63408 (2008, AUG)
논문 저자
Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, H. M. An, and T. G. Kim*
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