Papers

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory (IF 3.597; JCR 23.548%)

2004~2009
작성자
김태형
작성일
2008-06-18 15:40
조회
142

저널명 : Applied Physics Letters. Vol. 92, No. 13, P.132104 (2008, MAR)

논문 저자
Y. J. Seo, K. C. Kim, Y. M. Sung, H. Y. Cho, M. S. Joo, S. H. Pyi, and Tae Geun Kim
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