Papers

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers (IF 1.632; JCR 59.615%)

2004~2009
작성자
김태형
작성일
2008-06-18 16:09
조회
180

저널명 : Journal of Crystal Growth 311, Pp 103-106 (2008, DEC)

논문 저자
Shi Jong Leem , Young Chul Shin , Kyoung Chan Kim , Eun Hong Kim , Yun Mo Sung ,Youngboo Moonc, Sung Min Hwang , and Tae Geun Kim
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