Papers

Defect engineering for 650nm high-power AlGaInP laser diodes (IF 1.902; JCR 58.696%)

2004~2009
작성자
홍석희
작성일
2006-06-17 15:29
조회
151

저널명 : Physica B-Condensed Matter 376-377(1), 641-644 (APR, 2006)

논문 저자
Dong Sup Kim,Kyoung Chan Kim, Young Chul Shin, D.H. Kang, Bum Jun Kim, Y.M. Kim, Y. Park, Tae Geun Kim
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