Papers

Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism (IF 1.632 ; JCR 59.615% )

2004~2009
작성자
유경종
작성일
2004-06-15 16:36
조회
121
저널명 : JOURNAL OF CRYSTAL GROWTH,  272 264-269 (2004, DEC)
논문 저자
Tae Geun Kim*, Kyoung Chan Kim, Dong-Ho Kim, Suk Ho Yoon, Jeoung Wook Lee, Cheol Soo Sone, Yong Jo Park
chevron-down