Papers

전체 248
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178
Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes (IF 1.134 ; JCR 77.119%)
유경종 | 2016.05.24 | 추천 0 | 조회 81
유경종 2016.05.24 0 81
177
Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability (IF 3.669 ; JCR 19.072% )
유경종 | 2016.05.24 | 추천 0 | 조회 79
유경종 2016.05.24 0 79
176
Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing (IF 3.597 ; JCR 23.548% )
유경종 | 2016.05.24 | 추천 0 | 조회 80
유경종 2016.05.24 0 80
175
Low power NiN-based resistive switching memory device using Ti doping (IF 3.597 ; JCR 23.548% )
유경종 | 2016.05.24 | 추천 0 | 조회 81
유경종 2016.05.24 0 81
174
A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si (111) Substrates (IF 1.134 ; JCR 77.119%)
유경종 | 2016.05.24 | 추천 0 | 조회 84
유경종 2016.05.24 0 84
173
Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device (IF 3.597 ; JCR 23.548% )
유경종 | 2016.05.24 | 추천 0 | 조회 93
유경종 2016.05.24 0 93
172
Glass-based transparent conductive electrode: its application to visible-to-ultraviolet light-emitting diodes (IF 8.758 ; JCR 10.35% )
유경종 | 2016.05.24 | 추천 0 | 조회 91
유경종 2016.05.24 0 91
171
Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory (IF 1.351 ; JCR 68.71% )
유경종 | 2015.05.24 | 추천 0 | 조회 81
유경종 2015.05.24 0 81
170
Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )
유경종 | 2015.05.24 | 추천 0 | 조회 79
유경종 2015.05.24 0 79
169
Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )
유경종 | 2015.05.24 | 추천 0 | 조회 84
유경종 2015.05.24 0 84
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